Abstract
We start from a microscopic model, previously developed by the authors, of excitons in semi-infinite semiconductors. The model allows the determination in closed form of the nonlocal exciton polarizability from wave functions. This embodies the additional boundary condition and a transition layer, whose depth is smaller than the exciton radius, where the exciton polarizability varies from the vacuum to the bulk value. Here we show how to calculate in closed form within the microscopic model non-normal incidence reflectivity, surface-polariton dispersion, and attenuated total reflection. The comparison between theory and experiments shows good agreement in several materials, while some discrepancies are found in InP and GaAs.
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