Abstract
The variation of the reflectivity, stopband width, and penetration depth of disordered GaAs/(Al,Ga)As distributed Bragg reflectors (DBRs) is analyzed by simulating interdiffusion of Al and Ga at the interfaces within the DBR. The results show that important optical parameters are unchanged for short diffusion lengths, but drastically degrade for larger diffusion lengths. The results indicate the limits of thermal processing for device structures containing GaAs/AlGaAs DBRs.
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