Abstract
Photoluminescence (PL) study has been performed on epitaxial layers of CuGaSe2 and CuAlSe2 grown by metalorganic chemical vapor epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method. PL properties of epilayers are compared with each other for those grown on GaAs (100), CuGa0.96In0.04Se2 (100), CuGa0.96In0.04Se2 (112), and randomly oriented CuGa0.96In0.04Se2 substrates. PL results are discussed in terms of the lattice mismatches and stress in the epilayers.
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