Abstract
The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E1, E1+Δ1, and E2 of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu2−xTe according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy.
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