Abstract
The crystallization process of Cr-doped Sb2Te thin films induced by repeated femtosecond laser pulses was studied systematically. The threshold effects and corresponding mechanism were comprehensively analyzed by real-time reflectivity measurements, optical microscopic imaging, and Raman scattering spectra. It was found that by doping the appropriate content of Cr into Sb2Te thin films, improved optical-thermal properties could be obtained, even in ultrafast crystallization processes.
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