Optical properties of charge-density-wave ground states for inversion layers in many-valley semiconductors

Abstract

A charge-density-wave ground state satisfactorily accounts for the experimentally observed occupied valley degeneracy, high cyclotron mass and stress-dependent anisotropic conductivity in inversion layers at the Si(111)-Si${\mathrm{O}}_{2}$ interface. We make specific predictions about anisotropic optical transitions, the observation of which would distinguish the density-wave model from any alternative explanations of the experimental data.