Abstract
Optical properties of CdTe/ZnTe quantum dots are studied as a function of a capping layer thickness by means of time-integrated and time-resolved microphotoluminescence. The samples are grown by MBE and covered with 10 nm and 100 nm capping layer. Despite that the proximity of the surface may result in an enhanced rate of non-radiative processes limiting the quantum dots optical performance, the set of results indicates that reduction of the capping layer thickness down to 10 nm has no e ect on the quantum dot emission intensity and decay rate, contrary to the previously reported case of InAs/GaAs quantum dots.
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