Abstract
In this paper, the luminescent properties (5–300 K) of CdSe/ZnSe quantum dot structures grown on conventionally used GaAs(100) substrates and Si(100)/Ge virtual substrates are studied. It has been established that the quantum dot structures grown on different substrates exhibit comparable high luminescence efficiency. Two peaks were observed in the luminescence spectra of some samples grown on GaAs as well as Si/Ge substrates. They are attributed to the emission from two types CdSe islands (quantum dots) between which there is no efficient exciton transfer. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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