Abstract
We report on single photon emission with a wavelength below 500 nm from single CdSe quantum dots (QDs) grown by migration-enhanced epitaxy providing a reduced QD lateral density below 1010 cm-2. The QD photoluminescence was observed at the temperature of 8 K in 200-nm-wide mesa-structures made of CdSe QD heterostructures. The antibunching effect under cw excitation with g(2)(0) ˜ 0.2 was demonstrated.
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