Optical properties of bismuth sulfide thin film prepared by thermal evaporation method

Abstract

Two types of thin films of Bi2S3 have been prepared on chemically cleaned glass substrate by thermal evaporation technique. Either by thermal evaporation of Bi2S3 powder or by thermal evaporation of bismuth and sulfur from two separate source. (Both annealed for 3 h in air inside an oven). Optical properties of these annealed films have been studied by measuring transmittance, absorbance and reflectance of the films. Optical constants such as absorption coefficient, extinction constants, refractive index, dielectric constants etc. of both types of Bi2S3 films have been calculated. Optical band gap of type (I) and (II) films have been found to be 1.647 and 1.668 eV respectively. The crystalline structure and purity of these Bi2S3 films have been studied by taking X-ray diffraction and X-ray fluorescence spectra. Surface morphology of the films has been studied by scanning electron microscopy.