Abstract
The optical dielectric function of bismuth germanate (Bi4Ge3O12) has been measured using spectroscopic ellipsometry and optical transmission. Analysis near the direct band edge indicates that there are at least three critical points at 4.44 (low intensity) and at 4.75 and 4.91 (high intensity). Using transmission measurements, the band gap is determined to be 4.20 eV, which is likely determined by the defects in the material. Comparisons are made with relativistic electronic structure and optical calculations based on the Engel–Vosko generalized gradient approximation. The near-absorption-edge critical points are associated with spin-orbit-split bands which significantly modify the conduction bands.
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