Abstract
The energy bandgaps, reflectances, and indices of refraction of coevaporated thin films of arsenic-and antimony-triselenide and of stoichiometric and antimony-rich antimony trisulfide were determined from measurements of transmittance at wavelengths extending upward from the fundamental absorption region and reflectance at wavelengths below the absorption edge. In mixtures of As2Se3 and Sb2Se3, the optical bandgap decreases and the index of refraction increases as the ratio of Sb to As is increased. Similarly, the bandgap of antimony trisulfide decreases with the addition of excess antimony. The deduced bandgaps of evaporated As2Se3 and Sb2S3 films agree well with published values for single crystals. Dielectric constants of representative compositions were obtained from capacitance measurements.
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