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Abstract
A brief review of the optical properties of GaAs nipi doping superlattices (DSLs) subjected to N 2 +, Ar + ions, and alpha particle bombardment is given. Several experimental techniques, such as low temperature CW and time resolved photoluminescence (CW and TR-LTPL) as well as Raman spectroscopy (RS) and spectroscopic ellipsometry (SE) have been used to detect new optically active bands. An attempt is made to explain the origin of these new bands.
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