Abstract
The dc-pulsed plasma magnetron sputtering was used for depositing TiO2, ZrO2, and Ti50-Zr50 anti-reflection coating with thickness of 40 nm on p-n junction wafers and glass substrates. Furthermore, the antireflective properties of silicon nitride deposited elsewhere using plasma enhanced chemical vapor deposition (PECVD) were compared with those of metal oxide films. X-ray structural analysis reveals amorphous nature of the prepared films. The optical transmittance and reflectance measurements were investigated at room temperature in the wavelength range from 250 to 2500 nm. At long wavelengths, ZrO2 has a slightly higher transparency than that of TiO2 and Ti50-Zr50 oxide. On the other hand, the transparency at short wavelengths has different behavior. At about 300nm, a sharp decrease in the transparency of the three coatings was found. On the other hand, reflectance measurements show a decrease in reflectivity at 600 nm for ZrO2 and Ti50-Zr50 oxide as compared toTiO2. Samples irradiated with gamma rays at a dose of 5 kGray show different behavior in reflectivity due to displacement damage in Si-based cells.
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