Abstract
Effects of nitrogen implantation on optical properties of amorphous carbon (a-C) films have been investigated. The optical (Tauc) gap of the films decreases with increasing ion dose due to structural modification during ion implantation. The photoluminescence (PL) spectrum for the as-deposited film has broad peak centered at 2.22eV. Nitrogen irradiation leads to a blue shift of the PL peak and decrease of the PL peak width. The PL peak centered at 2.34eV is obtained from the films implanted with nitrogen at the dose of 1×1015cm−2. Ion implantation can control PL properties of the films.
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