Abstract
The effect of excitons in AlxGa1−xAs/GaAs superlattice solar cells has been investigated. We have shown that the superlattice active layers are effective to improve the solar cell performances because of the exciton enhanced photo-absorption. External quantum efficiency spectra show sharp and intense increase at the absorption edge due to excitonic absorption. This result indicates that excitonic photo-absorption can be stabilized at room temperature by using a superlattice structure. Optical properties of superlattice solar cells depend on the superlattice parameters because they determine the excitonic confinement effect, the tunneling effect and the sub-band structure. In this study, we compare external quantum efficiency for solar cells with different superlattice parameters to optimize the structure. The optimal barrier layer thickness is determined to be 1nm for the Al0.5Ga0.5As/GaAs superlattice solar cell with 2-μm-thick active layer.
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