Abstract
AbstractA smooth laser structure on (1‐101) GaN microstripes was successfully fabricated on a patterned (100) 8°‐off Si substrate. The sample has a high internal quantum efficiency (IQE) compared with blue LEDs on a sapphire substrate. The high‐density excitation PL spectrum observed from the cross section of the sample shows marked narrowing, and the integral PL intensity also shows a steep increase. These results indicate the onset of stimulated emission from an InGaN‐based multi quantum well (MQW) active layer on (1‐101) GaN / (100) Si. To the best of our knowledge, this is the first report of the observation of a stimulated emission from a (1‐101) MQW on a Si substrate. We succeeded in fabricating and verifying the high‐quality laser structure on semipolar (1‐101) GaN on a Si substrate. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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