Abstract
To investigate the effect of RTiO3 on optical properties of BiFeO3 thin films, 0.95BiFeO3-RTiO3 (R = Mg, Pb, Ba, Ca, and Sr) thin films were grown on amorphous quartz substrates by radio frequency sputtering, where these films with a high phase purity were obtained. A direct band gap of ∼2.718∼2.763 eV is identified for these 0.95BiFeO3-RTiO3 thin films, demonstrating different band gap values for these films with RTiO3 doping. 0.95BiFeO3-RTiO3 (Pb and Mg) thin films exhibit better optical properties (transmittance>85% at 550 nm). These results show that 0.95BiFeO3-RTiO3 thin films are potential candidate materials for photonic devices.
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