Abstract
Photoluminescence (PL) measurement on porous Si (PS) is carried out to investigate the interdefects. This article presents experimental results supporting the role of the ballistic transport in strong “red” PL of porous silicon. It is shown that this PL band connects with emission of oxide-related defects at the Si/SiO x interface. Also, the activation energy of the electrons is confined in the PS, as obtained from the temperature-dependent PL spectra. The activation energies of the electrons confined in PS A peak and B peak were 67 and 61 meV, respectively.
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