Abstract

Abstract Optical waveguides play a vital role in the manufacture of various optical devices due to their unique performances and high-degree integration. We report on the preparation and characterization of the planar waveguides in the Dy3+/Tm3+-codoped GeS2–Ga2S3–PbI2 chalcohalide glass. The waveguide was formed by the 400 keV H+-ion implantation with a dose of 8 × 1016 ions/cm2. Its thermal stability was studied by annealing at 260°C for 1 h. The changes in the nuclear energy loss with the implantation depth were simulated by the stopping and range of ions in matter (SRIM 2013). The dark-mode characteristics of the waveguide were measured by the prism coupling method. The refractive index distribution of the optical waveguide was reconstructed by the reflectivity calculation method. The modal profile of the waveguide structure was calculated by the finite-difference beam propagation method (FD-BPM). The thermally stable proton-implanted Dy3+/Tm3+-codoped GeS2–Ga2S3–PbI2 chalcohalide glass waveguide is expected to be applied in mid-infrared integrated optical devices.

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