Abstract
AbstractIn this paper, we report the effect of annealing temperature on the properties of copper indium diselenide (CuInSe2) thin films. The CuInSe2 thin films were fabricated at 500 °C for 2 h by annealing Cu‐In layers (as precursors) selenized in a glass tube with pure selenium powder. The structural and morphological properties of the CuInSe2 thin films were characterized respectively by means of x‐ray diffraction (XRD) and field‐emission scanning electron microscope (FE‐SEM). The type of CuInSe2 thin film has been identified as direct allowed and the band gap value was determined. The study of UV/Visible/NIR absorption shows that the band gap value of CuInSe2 thin film is about 1.07 eV, which is within an optimal range for harvesting solar radiation energy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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