Abstract
In this work, multiple-energy (400 keV, 450 keV, 500 keV) He ions implantation is proposed on Ytterbium doped YGG crystal. The choice of multiple-energy could widen the barrier layer by He ions accumulation at the end of the trajectory. Prism coupling and end-face coupling are used to obtain the optical properties in the waveguide region. The damage displacement profile and energy loss profile are simulated by SRIM 2010. The comparison between substrate and waveguide region on the micro-luminescence properties and Raman characteristics of Yb:YGG crystal are investigated also. The sequence annealing treatment results indicate that the sample surface break to pieces when the annealing temperature up to 600 °C, which provide direct evidence for the formation of He-bubble in He-implanted Yb:YGG crystal. Therefore, the results of this work provide reference value on YGG film fabrication by using multiple-energy He ion implantation.
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