Abstract
The optical properties of reactively sputtered InN thin films were measured in the spectral region 2.5–5.5 eV using spectroscopic ellipsometry. The measured pseudodielectric function data of the InN films were found to vary with deposition power. The effective medium approximation theory, which describes a random aggregate microstructure, was able to relate the differences in the measured optical properties to the surface microroughness and porosity of the InN films. The relationship between microstructure and deposition power was subsequently verified by scanning electron microscopy. The analysis and electron microscopy indicate that the film deposited at 90 W was most representative of InN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.