Abstract

The optical and structural properties of ZnO nanorods that are modified using $$\hbox {H}_2\text {O}_2$$ and used as the conductive filament (CF) for poly(methyl methacrylate) (PMMA)-based resistive switching (Rs) applications are studied. ZnO nanorods are used as the CF for a PMMA-based Rs device, to determine their specific properties and to determine the effect of oxygen vacancies on the Rs performance in ZnO. The Rs performance for PMMA-based devices is affected by treatment with $$\hbox {H}_2\text {O}_2$$ . An appropriate $$\hbox {H}_2\text {O}_2$$ treatment time produces a significant change in the Rs performance for a PMMA/ZnO nanorod array device, because there is a change in the number of oxygen vacancies in ZnO that is treated with $$\hbox {H}_2\text {O}_2$$ solution at $$60 ^{\circ }\hbox {C}$$ for 60 s. This study demonstrates the operation of a PMMA-based Rs device that features a ZnO CF that undergoes treatment with $$\hbox {H}_2\text {O}_2$$ .

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