Optical properties and crystal lattice parameters of TlGa1−xFexSe2 solid solutions

Abstract

Semiconductor solid solutions of the system TlGaSe2–TlFeSe2 are investigated. The parameters of the crystal lattice of the compounds of this system are established with the aid of an x-ray structural analysis. Experimental studies of the absorption spectra of single crystals of the solid solutions TlGa1−xFexSe2 (x=0, 0.005, 0.01) are carried out in the temperature interval 10–120K, and the energy positions and coefficients of the temperature shift of the excitons at the edge and deep inside the optical absorption region are determined.