Abstract
CdTe quantum dots (QDs) in silicate glasses were fabricated through conventional melt-quenching and heat-treatment; steady-state and transient optical properties of CdTe QDs were investigated. CdTe QDs with diameters of 2.3–5.9 nm with photoluminescence in the range of 553–768 nm were precipitated in the glasses. Time-resolved photoluminescence and transient absorption analysis showed that photoluminescence of CdTe QDs was composed of intrinsic emission and defect emission. Oxidation of Te2− and formation of Te2 during thermal treatment led to the unpassivated Cd2+ on the surface of CdTe QDs and formation of shallow trapping states. The photo-generated electrons were trapped by the shallow surface states of CdTe QDs within 0.4±0.03 ps, and Auger recombination processes occurred within a timescale of 3.2±0.35 ps. Both intrinsic emission and defect emission with effective lifetimes of several nanoseconds and dozens of nanoseconds were observed.
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