Abstract
GaN quantum dots were grown on anAl0.11Ga0.89N buffer layer by using flow rate modulation epitaxy. The Stranski–Krastanov growth mode wasidentified by an atomic force microscopy study. The thickness of the wetting layer is about7.2 monolayers. The temperature dependent photoluminescence studies showed that at lowtemperature the localization energy, which accounts for de-trapping of excitons, decreaseswith the reducing dot size. The decrease in emission efficiency at high temperature isattributed to the activation of carriers from the GaN dot to the nitrogen vacancy(VN) stateof the Al0.11Ga0.89N barrier layer. The activation energy decreases with reducing dot size.
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