Optical Properties and Carrier Dynamics in Inorganic and Hybrid Inorganic/Organic ZnO‐ and GaN‐Based Nanowire Structures

Abstract

In this paper, results on the optical properties and carrier dynamics in inorganic and hybrid inorganic/organic semiconductor nanowire structures based on the ZnO and GaN material systems, obtained by the involved groups in the last years, are reviewed. First, the recombination dynamics in 3D GaN‐based microrod LED structures is analyzed and discussed. In particular, the dynamics at high excitation densities close to the damage threshold of the material is studied. This is followed by a discussion of the carrier dynamics in nanowire structures functionalized with colloidal CdSe quantum dots (QDs) or carbon nanoparticles (C‐Dots). Here, the nanoparticles allow for light absorption at photon energies below the bandgap of the semiconductor nanowire, and subsequent electron tunneling couples the electronic systems of the nanoparticles and the nanowires (NWs). Finally, the fabrication of nanowire/polymer core–shell structures is demonstrated and the electrical properties of n‐nanowire/p‐polymer hybrid junctions are studied.