Abstract
The luminescence of layered GaAs/AlGaAs MQW (multiple quantum wells) grown by molecular beam epitaxy has been studied. Under hydrostatic pressure the narrow excitonic line shifts to higher energies; thus it can be used to calibrate the pressure. The shift of the line is about 11 meV/kbar and does not seem to vary with temperature. Samples with different widths and depths of the wells have been investigated in order to increase the intensity of the line. Measurements are performed at various temperatures (from 12 to 400 K), powers and polarizations of the exciting light. The upper pressure limit of the device is determined by the change from direct to indirect optical transitions. The comparison with ruby fluorescence shows that our MQW sensors are over an order of magnitude more accurate in the 0–40 kbar pressure range.
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