Abstract
The effect of an electric field on s-polarized reflectivity and spectroscopic ellipsometry has been studied on planar-cavity PIN photodiode structures based on MOVPE grown (Al, Ga)As/GaAs systems with 20 times MQW absorption layers. In order to tune the cavity resonance and the exciton energy and to shift both modes, the direction of light incidence was varied in a wide range of angles and an electric field was applied perpendicular to the layer planes. For field strengths F > 5 MV/m and exciton energies lower than the cavity mode energy, the quantum confined Stark effect reveals strong anomalies: (i) the cavity mode attracts completely the exciton and (ii) the next red-side positioned cavity mode stops ultimatively the quantum confined Stark shift of the exciton.
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