Abstract
Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves, whose angle is sensitive to the polarization of the incident. Thus, this application may serve for encryption/decryption devices since the strongest electrical responsivity is only obtained for very specific spatial polarization directions of the illumination beam. When this V-groove is sufficiently narrow, the device mainly responds to one polarization and not to the other. In such a way, electrons are generated only for one specific polarization. While the nature of the data remains electronic, the modulation control is optic, creating a photo-induced current depending on the polarization direction. This coupled device acts as a polarization modulator as well as an intensity modulator. The article focuses on the integration of several devices in different configurations of circuitry: dual, triple, and multi-element. Case studies of several adjacent devices are presented with varying critical variables, such as the V-groove aperture dimensions. Analytical models and complementary numerical analyses are presented for the future smooth integration into Complementary Metal-Oxide-Semiconductor (CMOS) technology.
Highlights
IntroductionThe need for ultra-fast optical switching methods is continuously growing [1,2]
We developed Polarizing Transistors (PT), called Silicon-On-Insulator Photo-Polarized Activated Modulators (SOIP2AM) that share a V-groove component
In an overview of the Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) transistors’ geometry evolution, one can look at the different generations; starting from the well-known standard MOSFET transistor (Source, Gate, and Drain all located in the same plane), moving forward to the SOIPAM device (Gate located in the bulk, and serving as an intensity modulator), continuing through the SOIP2AM device, and finishing with the N-SOIP2AM
Summary
The need for ultra-fast optical switching methods is continuously growing [1,2]. Several techniques were developed in the last decades, some of which were based on the electro-optic effect [3]. Most of these techniques use special materials, such as Potassium Lithium Tantalum Niobate (KLTN) crystals [4]. Others are based on molecules [5] or Gallium phosphide (GaP) [6]. One can imagine how useful the switching effect for micro-electronic needs could be when using a silicon-based device
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