Abstract

Electroluminescence polarization measurements have been performed on a series of semi-polar InGaN light emitting diodes (LEDs) grown on semi-polar (11–22) templates with a high crystal quality. The emission wavelengths of these LEDs cover a wide spectral region from 443 to 555 nm. A systematic study has been carried out in order to investigate the influence of both indium content and injection current on polarization properties, where a clear polarization switching at approximately 470 nm has been observed. The shortest wavelength LED (443 nm) exhibits a positive 0.15 polarization degree, while the longest wavelength LED (555 nm) shows a negative −0.33 polarization degree. All the longer wavelength LEDs with an emission wavelength above 470 nm exhibit negative polarization degrees, and they further demonstrate that the dependence of polarization degree on injection current enhances with increasing emission wavelength. Moreover, the absolute value of the polarization degree decreases with increasing injection current. In contrast, the polarization degree of the 443 nm blue LED remains constant with changing injection current. This discrepancy can be attributed to a significant difference in the density of states (DOS) of the valence subbands.

Highlights

  • The past two decades have witnessed the major advancement in developing III-nitride semiconductor based optoelectronics, epitomized by blue InGaN light emitting diodes (LEDs)

  • It has previously been observed that InGaN/GaN LEDs grown on semi-polar (11–22) bulk substrates operating in the blue, green and amber spectral region do not exhibit any enhancement in polarization degree with increasing indium composition17, while a monotonic increase in the absolute value of polarization degree has been reported in semi-polar (11–22) InGaN/GaN LEDs with similar rising indium content18

  • A series of InGaN single quantum well (SQW) LEDs with different indium composition were grown on overgrown semi-polar (11–22) GaN templates on m-plane sapphire by metal-organic chemical vapor deposition (MOCVD)

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Summary

Introduction

The past two decades have witnessed the major advancement in developing III-nitride semiconductor based optoelectronics, epitomized by blue InGaN light emitting diodes (LEDs). It is crucial to fully understand the polarization mechanisms of different wavelength semi-polar (11–22) InGaN LEDs operating under a range of different injection currents.

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