Abstract
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k?p method for the above two planes. The theoretical calculations are consistent with the experimental results.
Highlights
Nitride based light-emitting diodes (LEDs) and laser diodes (LDs) have been extensively researched as they promise highly-efficient, cost-effective and environmentally-friendly illumination sources compared to conventional incandescent and fluorescent-based lighting [1]
A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm
The extracted valence band energy separation was consistent with the optical polarization ratios
Summary
Nitride based light-emitting diodes (LEDs) and laser diodes (LDs) have been extensively researched as they promise highly-efficient, cost-effective and environmentally-friendly illumination sources compared to conventional incandescent and fluorescent-based lighting [1]. Conventional GaN-based LEDs and LDs on the “polar” c-plane suffers from internal polarization-related electric fields which reduce the quantum well (QW) radiative recombination rate and cause large shifts in emission wavelength with increasing carrier injection [2,3] To circumvent these polarization effects, device on nonpolar and semipolar orientations have been studied for their potential to realize improved performance including high efficiency, high optical gain, high indium incorporation, and stable emission wavelength [4,5,6,7,8].
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