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Abstract
The features of the optical phonons and the electron–optical-phonon interaction in quantum wells that involve layers of mixed crystal are studied theoretically based on the dielectric continuum approach. The interface optical (IO)-phonon energies and the electron–IO-phonon coupling strengths of Al 1−x In x As/ AlAs, InAs/ Al 1−x In x As , and Al 1− x In x As/Al 1− y Ga y As quantum wells are calculated numerically. It is found that the multi-mode effect of the mixed crystals changes greatly the property of the IO phonons in the quantum wells.
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