Optical performance analysis of InP nanostructures for photovoltaic applications.

Abstract

In this article, we have performed a comparative analysis of six different types of nanostructures that can improve photon management for photovoltaic applications. These nanostructures act as anti-reflective structures by improving the absorption characteristics and tailoring the optoelectronic properties of the associated devices. The absorption enhancement in indium phosphide (InP) and silicon (Si) based cylindrical nanowires (CNWs) and rectangular nanowires (RNWs), truncated nanocones (TNCs), truncated nanopyramids (TNPs), inverted truncated nanocones (ITNCs), and inverted truncated nanopyramids (ITNPs) are computed using the finite element method (FEM) based commercial COMSOL Multiphysics package. The influence of geometrical dimensions of the investigated nanostructures such as period (P), diameter (D), width (W), filling ratio (FR), bottom W and D (W bot/D bot), and top W and D (W top/D top) on the optical performance are analyzed in detail. Optical short circuit current density (J sc) is computed using the absorption spectra. The results of numerical simulations indicate that InP nanostructures are optically superior to Si nanostructures. In addition to this, the InP TNP generates an optical short circuit current density (J sc) of 34.28 mA cm-2, which is ∼10 mA cm-2 higher than its Si counterpart. The effect of incident angle on the ultimate efficiency of the investigated nanostructures in transverse electric (TE) and transverse magnetic (TM) modes is also explored. Theoretical insights into the design strategies of different nanostructures proposed in this article will act as a benchmark for choosing the device dimensions of appropriate nanostructures for the fabrication of efficient photovoltaic devices.