Abstract
The optical modification effect of Ga + ion implantation in hydrogenated silicon–carbon alloy films has been studied. As a result of the implantation a well-expressed “darkening” effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5–3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga +-focused ion beam. Possible applications of this effect in the area of sub-micron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga + liquid metal ion sources.
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