Abstract

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 microns. By tuning either the near-IR pump wavelength between 1.75 and 2 microns, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 microns, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 micro-J for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

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