Optical parameters of a magnetized space-charge neutral group IV semiconductor

Abstract

Using a hydrodynamic model of semiconductor plasmas, we report an analytical investigation of hot-carrier induced nonlinearity and its impact on the optical parameters (refractive index and absorption coefficient) of a magnetized, space-charge neutral group IV semiconductor. The carrier heating by the pump is assumed to induce nonlinearity in the medium through momentum transfer collision frequency ν of the carriers and space-charge neutrality of the medium. For the linear optical parameters (nl, al), both electrons and holes are found to contribute resonantly at high frequency of the pump (ω0≈ωce). For the nonlinear optical parameters (n2, a2), the holes contribute significantly in the low pump frequency regime (ω0≈ωch,) whereas in the high pump frequency regime (ω0≈ωce), both kinds of carriers contribute resonantly in which a much larger contribution comes from the electrons.