Optical orientation and femtosecond relaxation of spin-polarized holes in GaAs.

Abstract

Optical orientation of spin-polarized heavy and light holes followed by relaxation to other valence subband states has been observed unambiguously in undoped bulk GaAs in spite of the extremely short spin relaxation time. The measured relaxation time for the heavy holes is 110 fs +/-10%. The results are relevant for applications such as interpretation of spin-polarized transport in semiconductors as well as the assessment of feasibility of hole-based spin-transport devices which relies on precise knowledge of the hole-spin relaxation time.