Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness

Abstract

This paper presents an extensive numerical analysis and experimental testing of a 420 nm InGaN edge-emitting laser grown on plasmonic GaN substrate. Using a simple transfer matrix method, we investigate the influence of waveguide, bottom AlGaN cladding and substrate parameters on the modal gain and the distribution of the mode. Numerical analysis reveals that using plasmonic substrate the thickness of the n-cladding layer can be reduced to as little as 100 nm. In experimental tests, reducing the AlGaN bottom cladding down to 200 nm is shown to cause no worsening of the threshold parameters.