Abstract
Abstract The possibility of occurrence of the coherent optical transient effect known as optical nutation has been analytically established in the semiconductor quantum well (QW) structure, namely GaAs/GaxA11−xAs most extensively used in optical electronics. Ultra-short-pulse low-intensity band-to-band excitation of electrons to the 1s Wannier-Mott exciton state of the crystal has been considered to play an important role in the coherent radiation—QW interaction. Numerical estimations of the complex optical susceptibility and the transmitted intensity under the transient regime reveal ringing behaviour confirming the occurrence of optical nutation in III-V semiconducting QW structures.
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