Abstract
Abstract. An optoelectronic integrated device that carries out digital op-tical functions is designed in silicon technology. The device achieves theNOR gate, which has input and output optical signals, and is designed todetect and emit a 600-nm-wavelength light. The active detection area is1mm 2 , and it can achieve frequencies of the order of megahertz. © 2001Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.1403741] Subject terms: optoelectronics; optical interconnects.Paper 200378 received Sep. 26, 2000; revised manuscript received Apr. 10,2001; accepted for publication Apr. 27, 2001. 1 Introduction High-density interconnection devices are quite difficult toimplement with conventional electronic circuits. However,because of the great interest in using optical signals, 1–3 thetechnology for optoelectronic device fabrication is widelyused in telecommunications, optical switching, and infor-mation processing.One particularly promising technology, based on smartpixels,
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