Optical nonlinearities in the excited carrier density of atomically thin transition metal dichalcogenides

Abstract

In atomically thin semiconductors based on transition metal dichalcogenides, photoexcitation can be used to generate high densities of electron-hole pairs. Due to optical nonlinearities, which originate from Pauli blocking and many-body effects of the excited carriers, the generated carrier density will deviate from a linear increase in pump fluence. In this paper, we describe nonlinear absorption properties and excited carrier dynamics using a theoretical approach that combines results from ab initio electronic-state calculations with a many-body treatment of optical excitation. We determine the validity range of a linear approximation for the excited carrier density vs pump power and identify the role and magnitude of optical nonlinearities at elevated excitation carrier densities for ${\mathrm{MoS}}_{2}, {\mathrm{MoSe}}_{2}, {\mathrm{WS}}_{2}$, and ${\mathrm{WSe}}_{2}$ considering various excitation conditions. For photoexcitation at the bandgap, we find that the use of a linear absorption coefficient of the unexcited system can strongly underestimate the achievable carrier density in ${\mathrm{MoS}}_{2}$ due to many-body renormalizations of the two-particle density of states. The same holds for excitation of the high-energy band continuum in W-based materials.