Abstract

The linear and nonlinear optical properties such as second-harmonic generation susceptibility, optical absorption and refractive index change associated with intersubband transitions in AlGaN/GaN quantum well heterostructures have been investigated theoretically. The electronic states of these structures are calculated using both the envelope wave function approximation and the compact-density matrix formalism. The confining potential has been assumed to be semiparabolic. The results obtained for typical AlGaN/GaN single-heterostructure field effect transistors reveal that these properties strongly depend on the Al composition and the doping concentration as well. Also calculated is the electric field effect on the susceptibility, the refractive index, and the absorption coefficient. It was thus found that the applied electric field can improve considerably the nonlinear optical behavior of the AlGaN/GaN heterostructures studied.

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