Abstract
The formula for quantum efficiency in a semiconducting material was first derived by Seib in 1974 for a semi-infinite slab of semiconducting material. Seib's first-order analysis considered the effect of absorption coefficient, minority carrier diffusion length and depletion width. However, for modern devices on epitaxial material, smart sensors, quantum well devices, etc., the semi-infinite slab approximation breaks down. Here, we present the derivation for a finite slab that considers the thickness of the layer as a fourth parameter. We present a case study analyzing quantum efficiency, and hence MTF, in epitaxial silicon versus bulk gallium arsenide.
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