Optical monitoring of partial vapor pressures in CdZnTe system: a new tool for material technology development

Abstract

A technique for the determination of the partial pressures of Cd and Te2 vapors equilibrium with CdZnTe crystals has been developed. The technique has shown a large range of applicability. First of all, the technique can be used for in situ monitoring the vapor partial vapor pressures the case of technological relevant processes, such as material purification and crystal growth. Moreover, the technique is applied for the characterization of the stoichiometry of CdZnTe crystals with a sensitivity at least two orders of magnitude better than previously reported techniques. Finally, it is shown that partial pressure measurements can be directly related to the study of both the phase diagram and the point defect structure of CdTe