Abstract

Due to the recent development of optical probes, monitoring of surface structures during organometallic chemical vapor deposition (OMCVD) has now become possible. Reflectance-difference spectroscopy (RDS) revealed that the (001)GaAs surface under OMCVD conditions reconstructs into structures similar or identical to those that occur in ultrahigh vacuum as encountered during molecular beam epitaxy (MBE). Here, the author reviews recent real-time studies on the OMCVD and MBE growth using RDS and complementary techniques such as grazing-incidence X-ray scattering. >

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