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Abstract
Recent studies of dimensionality effects on hot electron photoluminescence (HPL) polarization in GaAs/AlAs superlattices (SLs) are reviewed. The effect of miniband formation in semiconductor superlattices on selection rules for optical transitions has been studied by means of polarized HPL. In the SL parameters two regimes can be distinguished which are characterized by their own selection rules. The peculiarities of selection rules for each of the regimes reveal themselves in linear and circular polarization of photoluminescence, momentum distribution function of photoexcited electrons and their behavior in a magnetic field. It is also demonstrated that the polarized HPL can be successively used in the study of ferromagnetic diluted magnetic semiconductors.
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