Abstract

We investigated the optoelectronic effect of MASnI3 perovskite-based photovoltaics by designing an active layer using the finite-difference time-domain simulation. AM 1.5 G was chosen as the solar light source, set to provide the 400–900 nm wavelength region. As an active layer design method, we controlled the active layer thickness from 20 to 200 nm with a 20 nm step. As the active layer thickness became thicker, J sc rose sharply and became saturated, and when it was 200 nm, J sc was highest at 25.64 mA cm−2. Furthermore, we solved the electric field intensity distribution for each wavelength of light according to the active layer thickness. Finally, by calculating J sc according to the active layer thickness and generation rate of the optimal device under indoor light sources, we were able to extend our research to indoor applications.

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