Abstract
We review successful measurement techniques for the evaluation of the recombination properties in semiconductor materials based on the optically induced free carrier absorption. All the methodologies presented share the common feature of exploiting a laser beam to excite electron-hole pairs within the volume of the sample under investigation, while the probing methods can vary according to the different methodology analyzed. As recombination properties are of paramount importance in determining the properties of semiconductor devices (i.e, bipolar transistor gain, power devices switching features, and solar cells efficiency), their knowledge allows for better understanding of experimental results and robust TCAD simulator calibration. Being contactless and applicable without any particular preparation of the sample under investigation, they have been considered attractive to monitor these parameters inline or just after production of many different semiconductor devices.
Highlights
The minority carriers recombination lifetime is one of the most important parameters as it both characterizes the semiconductor materials and it strongly influences devices properties
Without doubt, occupy an important role in the energy worldwide scenario, so the industry and research interest in their production and characterization are increasing. Their efficiency in converting the energy from solar to electrical critically depends on the recombination process by means of two parameters: the bulk recombination lifetime τb, which accounts for the recombination of electrons and holes inside the silicon crystal, and the surface recombination velocity SRV which is strongly dependent on the interface between the material and its boundaries: the former accounts for material quality, while the latter usually depends on the fabrication process
In this paper we present a review of two important contactless techniques used to determine the semiconductor materials lifetime: the Pump and Probe method (PP) [1] and the Infrared Lifetime Mapping method (ILM), otherwise known as Carriers Density Imaging (CDI) [2, 3]
Summary
The minority carriers recombination lifetime is one of the most important parameters as it both characterizes the semiconductor materials and it strongly influences devices properties. Without doubt, occupy an important role in the energy worldwide scenario, so the industry and research interest in their production and characterization are increasing As said, their efficiency in converting the energy from solar to electrical critically depends on the recombination process by means of two parameters: the bulk recombination lifetime τb, which accounts for the recombination of electrons and holes inside the silicon crystal, and the surface recombination velocity SRV which is strongly dependent on the interface between the material and its boundaries: the former accounts for material quality, while the latter usually depends on the fabrication process. The paper is organized as follows: in the first two sections we briefly recall the concept of recombination lifetime together with the main recombination mechanisms in semiconductor materials; in the subsequent sections we describe in detail of the selected techniques, having previously recalled the analytical tools necessary to their understanding
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